Temperature insensitive linewidth enhancement factor of p-type doped InAs∕GaAs quantum-dot lasers emitting at 1.3μm

The temperature dependence of microwave properties—relaxation frequency and Henry factor—of undoped and p-type doped ten InAs∕GaAs quantum-dot layer lasers is reported in the 20–80°C range. It is shown that the linewidth enhancement factor of the p-type doped devices is temperature insensitive while...

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Bibliographic Details
Published in:Applied physics letters 2008-05, Vol.92 (19)
Main Authors: Cong, D.-Y., Martinez, A., Merghem, K., Ramdane, A., Provost, J.-G., Fischer, M., Krestnikov, I., Kovsh, A.
Format: Article
Language:English
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Summary:The temperature dependence of microwave properties—relaxation frequency and Henry factor—of undoped and p-type doped ten InAs∕GaAs quantum-dot layer lasers is reported in the 20–80°C range. It is shown that the linewidth enhancement factor of the p-type doped devices is temperature insensitive while that of the undoped lasers shows a strong dependence for temperatures above 40°C.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2929384