Temperature insensitive linewidth enhancement factor of p-type doped InAs∕GaAs quantum-dot lasers emitting at 1.3μm

The temperature dependence of microwave properties—relaxation frequency and Henry factor—of undoped and p-type doped ten InAs∕GaAs quantum-dot layer lasers is reported in the 20–80°C range. It is shown that the linewidth enhancement factor of the p-type doped devices is temperature insensitive while...

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Published in:Applied physics letters 2008-05, Vol.92 (19)
Main Authors: Cong, D.-Y., Martinez, A., Merghem, K., Ramdane, A., Provost, J.-G., Fischer, M., Krestnikov, I., Kovsh, A.
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cited_by cdi_FETCH-LOGICAL-c159t-489f8d63440056c9e3bacda747b38bbf31d3657eedc5f257a5ccc2a36cec9d8b3
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container_issue 19
container_start_page
container_title Applied physics letters
container_volume 92
creator Cong, D.-Y.
Martinez, A.
Merghem, K.
Ramdane, A.
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Fischer, M.
Krestnikov, I.
Kovsh, A.
description The temperature dependence of microwave properties—relaxation frequency and Henry factor—of undoped and p-type doped ten InAs∕GaAs quantum-dot layer lasers is reported in the 20–80°C range. It is shown that the linewidth enhancement factor of the p-type doped devices is temperature insensitive while that of the undoped lasers shows a strong dependence for temperatures above 40°C.
doi_str_mv 10.1063/1.2929384
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title Temperature insensitive linewidth enhancement factor of p-type doped InAs∕GaAs quantum-dot lasers emitting at 1.3μm
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