Depth profile photoemission study of thermally diffused Mn/GaAs (001) interfaces

We have performed a depth profile study of thermally diffused Mn/GaAs (001) interfaces using photoemission spectroscopy combined with Ar + -ion sputtering. We found that Mn ion was thermally diffused into the deep region of the GaAs substrate and completely reacted with GaAs. In the deep region, the...

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Bibliographic Details
Published in:Journal of applied physics 2008-05, Vol.103 (10), p.103717-103717-4
Main Authors: Osafune, Y., Song, G. S., Hwang, J. I., Ishida, Y., Kobayashi, M., Ebata, K., Ooki, Y., Fujimori, A., Okabayashi, J., Kanai, K., Kubo, K., Oshima, M.
Format: Article
Language:English
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Summary:We have performed a depth profile study of thermally diffused Mn/GaAs (001) interfaces using photoemission spectroscopy combined with Ar + -ion sputtering. We found that Mn ion was thermally diffused into the deep region of the GaAs substrate and completely reacted with GaAs. In the deep region, the Mn 2 p core-level and Mn 3 d valence-band spectra of the Mn/GaAs (001) sample heated to 600 ° C were similar to those of Ga 1 − x Mn x As , zinc-blend-type MnAs dots, and/or interstitial Mn in tetrahedrally coordinated by As atoms, suggesting that the Mn atoms do not form any metallic compounds but are tetrahedrally coordinated by ligand atoms, and Mn 3 d states are hybridized with ligand orbitals lized but were hybridized with the electronic states of the host GaAs. Ferromagnetism was observed in the dilute Mn phase.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2931040