Evidence for an indirect gap in β−FeSi2 epilayers by photoreflectance spectroscopy

Photoreflectance spectra obtained from epitaxial films of semiconducting β−FeSi2 exhibit complex line shapes resulting from a variety of optical transitions. While we have previously established a direct gap at 0.934±0.002eV at 75K, we find an additional weak structure at a lower energy. We attribut...

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Bibliographic Details
Published in:Applied physics letters 2008-05, Vol.92 (21)
Main Authors: Birdwell, A. G., Littler, C. L., Glosser, R., Rebien, M., Henrion, W., Stauβ, P., Behr, G.
Format: Article
Language:English
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Summary:Photoreflectance spectra obtained from epitaxial films of semiconducting β−FeSi2 exhibit complex line shapes resulting from a variety of optical transitions. While we have previously established a direct gap at 0.934±0.002eV at 75K, we find an additional weak structure at a lower energy. We attribute the origin of this spectral feature to indirect transitions assisted by the emission of a phonon. From our analysis, we determine an indirect gap energy of 0.823±0.002eV at 75K.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2936076