Evidence for an indirect gap in β−FeSi2 epilayers by photoreflectance spectroscopy

Photoreflectance spectra obtained from epitaxial films of semiconducting β−FeSi2 exhibit complex line shapes resulting from a variety of optical transitions. While we have previously established a direct gap at 0.934±0.002eV at 75K, we find an additional weak structure at a lower energy. We attribut...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2008-05, Vol.92 (21)
Main Authors: Birdwell, A. G., Littler, C. L., Glosser, R., Rebien, M., Henrion, W., Stauβ, P., Behr, G.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c144t-fa0a49dd241f6ffebc7b67a3f714a7ea584ece9eccfd3a5d7e4a4c0ea1c4e90f3
cites cdi_FETCH-LOGICAL-c144t-fa0a49dd241f6ffebc7b67a3f714a7ea584ece9eccfd3a5d7e4a4c0ea1c4e90f3
container_end_page
container_issue 21
container_start_page
container_title Applied physics letters
container_volume 92
creator Birdwell, A. G.
Littler, C. L.
Glosser, R.
Rebien, M.
Henrion, W.
Stauβ, P.
Behr, G.
description Photoreflectance spectra obtained from epitaxial films of semiconducting β−FeSi2 exhibit complex line shapes resulting from a variety of optical transitions. While we have previously established a direct gap at 0.934±0.002eV at 75K, we find an additional weak structure at a lower energy. We attribute the origin of this spectral feature to indirect transitions assisted by the emission of a phonon. From our analysis, we determine an indirect gap energy of 0.823±0.002eV at 75K.
doi_str_mv 10.1063/1.2936076
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_2936076</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_2936076</sourcerecordid><originalsourceid>FETCH-LOGICAL-c144t-fa0a49dd241f6ffebc7b67a3f714a7ea584ece9eccfd3a5d7e4a4c0ea1c4e90f3</originalsourceid><addsrcrecordid>eNotkEFOwzAQRS0EEqWw4AbeskjxxI7dLFHVUqRKLKDraGKPwSgkkR0h5QasOQoH4RCchFR0NfOkP3--PmPXIBYgtLyFRV5KLYw-YTMQxmQSYHnKZkIImemygHN2kdLbhEUu5Yzt1x_BUWuJ-y5ybHloXYhkB_6C_QT85_v382tDTyHn1IcGR4qJ1yPvX7uhi-SbSYuH-9RPW-yS7frxkp15bBJdHeec7Tfr59U22z3eP6zudpkFpYbMo0BVOpcr8Np7qq2ptUHpDSg0hMVSkaWSrPVOYuEMKVRWEIJVVAov5-zm39dOj9OUpupjeMc4ViCqQx8VVMc-5B9grVZl</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Evidence for an indirect gap in β−FeSi2 epilayers by photoreflectance spectroscopy</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>AIP_美国物理联合会现刊（与NSTL共建）</source><creator>Birdwell, A. G. ; Littler, C. L. ; Glosser, R. ; Rebien, M. ; Henrion, W. ; Stauβ, P. ; Behr, G.</creator><creatorcontrib>Birdwell, A. G. ; Littler, C. L. ; Glosser, R. ; Rebien, M. ; Henrion, W. ; Stauβ, P. ; Behr, G.</creatorcontrib><description>Photoreflectance spectra obtained from epitaxial films of semiconducting β−FeSi2 exhibit complex line shapes resulting from a variety of optical transitions. While we have previously established a direct gap at 0.934±0.002eV at 75K, we find an additional weak structure at a lower energy. We attribute the origin of this spectral feature to indirect transitions assisted by the emission of a phonon. From our analysis, we determine an indirect gap energy of 0.823±0.002eV at 75K.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2936076</identifier><language>eng</language><ispartof>Applied physics letters, 2008-05, Vol.92 (21)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c144t-fa0a49dd241f6ffebc7b67a3f714a7ea584ece9eccfd3a5d7e4a4c0ea1c4e90f3</citedby><cites>FETCH-LOGICAL-c144t-fa0a49dd241f6ffebc7b67a3f714a7ea584ece9eccfd3a5d7e4a4c0ea1c4e90f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,778,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Birdwell, A. G.</creatorcontrib><creatorcontrib>Littler, C. L.</creatorcontrib><creatorcontrib>Glosser, R.</creatorcontrib><creatorcontrib>Rebien, M.</creatorcontrib><creatorcontrib>Henrion, W.</creatorcontrib><creatorcontrib>Stauβ, P.</creatorcontrib><creatorcontrib>Behr, G.</creatorcontrib><title>Evidence for an indirect gap in β−FeSi2 epilayers by photoreflectance spectroscopy</title><title>Applied physics letters</title><description>Photoreflectance spectra obtained from epitaxial films of semiconducting β−FeSi2 exhibit complex line shapes resulting from a variety of optical transitions. While we have previously established a direct gap at 0.934±0.002eV at 75K, we find an additional weak structure at a lower energy. We attribute the origin of this spectral feature to indirect transitions assisted by the emission of a phonon. From our analysis, we determine an indirect gap energy of 0.823±0.002eV at 75K.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNotkEFOwzAQRS0EEqWw4AbeskjxxI7dLFHVUqRKLKDraGKPwSgkkR0h5QasOQoH4RCchFR0NfOkP3--PmPXIBYgtLyFRV5KLYw-YTMQxmQSYHnKZkIImemygHN2kdLbhEUu5Yzt1x_BUWuJ-y5ybHloXYhkB_6C_QT85_v382tDTyHn1IcGR4qJ1yPvX7uhi-SbSYuH-9RPW-yS7frxkp15bBJdHeec7Tfr59U22z3eP6zudpkFpYbMo0BVOpcr8Np7qq2ptUHpDSg0hMVSkaWSrPVOYuEMKVRWEIJVVAov5-zm39dOj9OUpupjeMc4ViCqQx8VVMc-5B9grVZl</recordid><startdate>20080526</startdate><enddate>20080526</enddate><creator>Birdwell, A. G.</creator><creator>Littler, C. L.</creator><creator>Glosser, R.</creator><creator>Rebien, M.</creator><creator>Henrion, W.</creator><creator>Stauβ, P.</creator><creator>Behr, G.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20080526</creationdate><title>Evidence for an indirect gap in β−FeSi2 epilayers by photoreflectance spectroscopy</title><author>Birdwell, A. G. ; Littler, C. L. ; Glosser, R. ; Rebien, M. ; Henrion, W. ; Stauβ, P. ; Behr, G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c144t-fa0a49dd241f6ffebc7b67a3f714a7ea584ece9eccfd3a5d7e4a4c0ea1c4e90f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Birdwell, A. G.</creatorcontrib><creatorcontrib>Littler, C. L.</creatorcontrib><creatorcontrib>Glosser, R.</creatorcontrib><creatorcontrib>Rebien, M.</creatorcontrib><creatorcontrib>Henrion, W.</creatorcontrib><creatorcontrib>Stauβ, P.</creatorcontrib><creatorcontrib>Behr, G.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Birdwell, A. G.</au><au>Littler, C. L.</au><au>Glosser, R.</au><au>Rebien, M.</au><au>Henrion, W.</au><au>Stauβ, P.</au><au>Behr, G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Evidence for an indirect gap in β−FeSi2 epilayers by photoreflectance spectroscopy</atitle><jtitle>Applied physics letters</jtitle><date>2008-05-26</date><risdate>2008</risdate><volume>92</volume><issue>21</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Photoreflectance spectra obtained from epitaxial films of semiconducting β−FeSi2 exhibit complex line shapes resulting from a variety of optical transitions. While we have previously established a direct gap at 0.934±0.002eV at 75K, we find an additional weak structure at a lower energy. We attribute the origin of this spectral feature to indirect transitions assisted by the emission of a phonon. From our analysis, we determine an indirect gap energy of 0.823±0.002eV at 75K.</abstract><doi>10.1063/1.2936076</doi></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2008-05, Vol.92 (21)
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_2936076
source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP_美国物理联合会现刊（与NSTL共建）
title Evidence for an indirect gap in β−FeSi2 epilayers by photoreflectance spectroscopy
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T10%3A56%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Evidence%20for%20an%20indirect%20gap%20in%20%CE%B2%E2%88%92FeSi2%20epilayers%20by%20photoreflectance%20spectroscopy&rft.jtitle=Applied%20physics%20letters&rft.au=Birdwell,%20A.%20G.&rft.date=2008-05-26&rft.volume=92&rft.issue=21&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.2936076&rft_dat=%3Ccrossref%3E10_1063_1_2936076%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c144t-fa0a49dd241f6ffebc7b67a3f714a7ea584ece9eccfd3a5d7e4a4c0ea1c4e90f3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true