Stretched-exponential photoionization of the metastable defects in gallium doped Cd0.99Mn0.01Te: Statistical origins of the short-time power-law in response data

The subject of the present study is the low temperature nonexponential transients of photoconductivity build-up in gallium doped Cd0.99Mn0.01Te semiconducting mixed crystals possessing metastable defects, so called DX centers. The phototransients were analyzed in terms of two approaches. The first o...

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Bibliographic Details
Published in:Journal of applied physics 2008-06, Vol.103 (11)
Main Authors: Trzmiel, J., Weron, K., Placzek-Popko, E.
Format: Article
Language:English
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Summary:The subject of the present study is the low temperature nonexponential transients of photoconductivity build-up in gallium doped Cd0.99Mn0.01Te semiconducting mixed crystals possessing metastable defects, so called DX centers. The phototransients were analyzed in terms of two approaches. The first one was the two-exponential fitting that is usually applied to explain the persistent photoeffect build-up in materials with DX centers. The second, implemented in the above-mentioned semiconductors, was the stochastic model of relaxation leading to the stretched-exponential result. The latter fitting was found to be more appropriate for it justifies the short-time power-law exhibited by the phototransient response. According to the stochastic approach this behavior results from a heavy-tailed distribution of photoionized DX centers. The distribution can have its origin in different local arrangements.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2936984