Electronic properties of self-assembled alkyl monolayers on Ge surfaces

Covalent attachment of alkyl monolayers on (111) and (100) oriented Ge surfaces was achieved via thermal hydrogermylation with 1-octadecene ( C 18 H 36 ) , a process which is directly analogous to the well-known hydrosilylation reaction on Si. Current-voltage ( I V ) and high frequency capacitance-v...

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Bibliographic Details
Published in:Applied physics letters 2008-06, Vol.92 (22), p.223306-223306-3
Main Authors: Sharp, I. D., Schoell, S. J., Hoeb, M., Brandt, M. S., Stutzmann, M.
Format: Article
Language:English
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Summary:Covalent attachment of alkyl monolayers on (111) and (100) oriented Ge surfaces was achieved via thermal hydrogermylation with 1-octadecene ( C 18 H 36 ) , a process which is directly analogous to the well-known hydrosilylation reaction on Si. Current-voltage ( I V ) and high frequency capacitance-voltage ( C V ) measurements were performed on these metal-insulator-semiconductor structures with a liquid Hg contact to the organic layers. Strongly rectifying diodes with no surface Fermi level pinning are observed and the specific interfacial band bending is determined for both intrinsic and moderately n -type doped samples.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2939221