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Observation of interdot energy transfer between InAs quantum dots
We observed interdot excitation energy transfer between vertically aligned InAs quantum dots (QDs) separated by a 24 - nm -thick spacer layer. This transfer was explained by resonant energy transfer via an optical near-field interaction between the first excited state of small QDs and the second exc...
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| Published in: | Applied physics letters 2008-07, Vol.93 (4), p.042101-042101-3 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c350t-33ebdea92e5b88454c2deb236de2f47b1d3c47be1e0d204bd15772e15584f9a3 |
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| cites | cdi_FETCH-LOGICAL-c350t-33ebdea92e5b88454c2deb236de2f47b1d3c47be1e0d204bd15772e15584f9a3 |
| container_end_page | 042101-3 |
| container_issue | 4 |
| container_start_page | 042101 |
| container_title | Applied physics letters |
| container_volume | 93 |
| creator | Nishibayashi, K. Kawazoe, T. Ohtsu, M. Akahane, K. Yamamoto, N. |
| description | We observed interdot excitation energy transfer between vertically aligned InAs quantum dots (QDs) separated by a
24
-
nm
-thick spacer layer. This transfer was explained by resonant energy transfer via an optical near-field interaction between the first excited state of small QDs and the second excited states of large QDs. The excitation intensity dependence of the photoluminescence intensities showed that the energy transfer times were
75
ps
at
15
K
and
4
ns
at
77
K
. Our experi
mental results indicated that the III-V compound semiconductor QDs are appropriate for nanophotonic switching devices. |
| doi_str_mv | 10.1063/1.2945289 |
| format | article |
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24
-
nm
-thick spacer layer. This transfer was explained by resonant energy transfer via an optical near-field interaction between the first excited state of small QDs and the second excited states of large QDs. The excitation intensity dependence of the photoluminescence intensities showed that the energy transfer times were
75
ps
at
15
K
and
4
ns
at
77
K
. Our experi
mental results indicated that the III-V compound semiconductor QDs are appropriate for nanophotonic switching devices.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2945289</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2008-07, Vol.93 (4), p.042101-042101-3</ispartof><rights>2008 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-33ebdea92e5b88454c2deb236de2f47b1d3c47be1e0d204bd15772e15584f9a3</citedby><cites>FETCH-LOGICAL-c350t-33ebdea92e5b88454c2deb236de2f47b1d3c47be1e0d204bd15772e15584f9a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2945289$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,782,784,795,27924,27925,76383</link.rule.ids></links><search><creatorcontrib>Nishibayashi, K.</creatorcontrib><creatorcontrib>Kawazoe, T.</creatorcontrib><creatorcontrib>Ohtsu, M.</creatorcontrib><creatorcontrib>Akahane, K.</creatorcontrib><creatorcontrib>Yamamoto, N.</creatorcontrib><title>Observation of interdot energy transfer between InAs quantum dots</title><title>Applied physics letters</title><description>We observed interdot excitation energy transfer between vertically aligned InAs quantum dots (QDs) separated by a
24
-
nm
-thick spacer layer. This transfer was explained by resonant energy transfer via an optical near-field interaction between the first excited state of small QDs and the second excited states of large QDs. The excitation intensity dependence of the photoluminescence intensities showed that the energy transfer times were
75
ps
at
15
K
and
4
ns
at
77
K
. Our experi
mental results indicated that the III-V compound semiconductor QDs are appropriate for nanophotonic switching devices.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp1z0tLAzEUhuEgCo7Vhf8gWxdTc3KZy0YYipdCoZvuQzI5kRGb0SRV-u8d2y7cuPo48HLgIeQW2BxYJe5hzlupeNOekQJYXZcCoDknBWNMlFWr4JJcpfQ2nYoLUZBubRPGL5OHMdDR0yFkjG7MFAPG1z3N0YTkMVKL-Rsx0GXoEv3cmZB3WzqF6ZpcePOe8Oa0M7J5etwsXsrV-nm56FZlLxTLpRBoHZqWo7JNI5XsuUPLReWQe1lbcKKfBgGZ40xaB6quOYJSjfStETNyd3zbxzGliF5_xGFr4l4D0790DfpEn9qHY5v6IR9o_8d__Hr0-uAXP3v2Yaw</recordid><startdate>20080728</startdate><enddate>20080728</enddate><creator>Nishibayashi, K.</creator><creator>Kawazoe, T.</creator><creator>Ohtsu, M.</creator><creator>Akahane, K.</creator><creator>Yamamoto, N.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20080728</creationdate><title>Observation of interdot energy transfer between InAs quantum dots</title><author>Nishibayashi, K. ; Kawazoe, T. ; Ohtsu, M. ; Akahane, K. ; Yamamoto, N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-33ebdea92e5b88454c2deb236de2f47b1d3c47be1e0d204bd15772e15584f9a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nishibayashi, K.</creatorcontrib><creatorcontrib>Kawazoe, T.</creatorcontrib><creatorcontrib>Ohtsu, M.</creatorcontrib><creatorcontrib>Akahane, K.</creatorcontrib><creatorcontrib>Yamamoto, N.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nishibayashi, K.</au><au>Kawazoe, T.</au><au>Ohtsu, M.</au><au>Akahane, K.</au><au>Yamamoto, N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Observation of interdot energy transfer between InAs quantum dots</atitle><jtitle>Applied physics letters</jtitle><date>2008-07-28</date><risdate>2008</risdate><volume>93</volume><issue>4</issue><spage>042101</spage><epage>042101-3</epage><pages>042101-042101-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We observed interdot excitation energy transfer between vertically aligned InAs quantum dots (QDs) separated by a
24
-
nm
-thick spacer layer. This transfer was explained by resonant energy transfer via an optical near-field interaction between the first excited state of small QDs and the second excited states of large QDs. The excitation intensity dependence of the photoluminescence intensities showed that the energy transfer times were
75
ps
at
15
K
and
4
ns
at
77
K
. Our experi
mental results indicated that the III-V compound semiconductor QDs are appropriate for nanophotonic switching devices.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2945289</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2008-07, Vol.93 (4), p.042101-042101-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_2945289 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); American Institute of Physics |
| title | Observation of interdot energy transfer between InAs quantum dots |
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