Submicron mapping of silicon-on-insulator strain distributions induced by stressed liner structures

Strain distributions within a silicon-on-insulator (SOI) layer induced by overlying compressively stressed Si3N4 features were measured using x-ray microbeam diffraction. A comparison of analytical and numerical mechanical models of the depth-averaged strain distributions to the measured strain prof...

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Bibliographic Details
Published in:Journal of applied physics 2008-07, Vol.104 (1)
Main Authors: Murray, Conal E., Saenger, K. L., Kalenci, O., Polvino, S. M., Noyan, I. C., Lai, B., Cai, Z.
Format: Article
Language:English
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Summary:Strain distributions within a silicon-on-insulator (SOI) layer induced by overlying compressively stressed Si3N4 features were measured using x-ray microbeam diffraction. A comparison of analytical and numerical mechanical models of the depth-averaged strain distributions to the measured strain profiles in the SOI layer indicated a blanket film stress of −2.5 GPa in the Si3N4 features. A two-dimensional boundary element model, implemented to analyze thin film/substrate systems, reproduced the observed strain distributions better than an edge-force formulation due to the incorporation of loading along the Si3N4/Si interface.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2952044