Organometallic vapor phase epitaxial growth of GaN on ZrN∕AlN∕Si substrates

An intermediate ZrN∕AlN layer stack that enables the epitaxial growth of GaN on (111) silicon substrates using conventional organometallic vapor phase epitaxy at substrate temperatures of ∼1000°C is reported. The epitaxial (111) ZrN layer provides an integral back reflector and Ohmic contact to n-ty...

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Bibliographic Details
Published in:Applied physics letters 2008-07, Vol.93 (2)
Main Authors: Oliver, Mark H., Schroeder, Jeremy L., Ewoldt, David A., Wildeson, Isaac H., Rawat, Vijay, Colby, Robert, Cantwell, Patrick R., Stach, Eric A., Sands, Timothy D.
Format: Article
Language:English
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Summary:An intermediate ZrN∕AlN layer stack that enables the epitaxial growth of GaN on (111) silicon substrates using conventional organometallic vapor phase epitaxy at substrate temperatures of ∼1000°C is reported. The epitaxial (111) ZrN layer provides an integral back reflector and Ohmic contact to n-type GaN, whereas the (0001) AlN layer serves as a reaction barrier, as a thermally conductive interface layer, and as an electrical isolation layer. Smooth (0001) GaN films less than 1μm thick grown on ZrN∕AlN∕Si yield 0002 x-ray rocking curve full width at half maximum values as low as 1230arcsec.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2953541