High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

Self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs) using ultrahigh-vacuum deposited Al2O3∕Ga2O3(Gd2O3) (GGO) dual-layer dielectrics and a TiN metal gate were fabricated. For a In0.53Ga0.47As MOSFET using a gate dielectric of Al2O3(2nmthick)∕GGO...

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Bibliographic Details
Published in:Applied physics letters 2008-07, Vol.93 (3)
Main Authors: Lin, T. D., Chiu, H. C., Chang, P., Tung, L. T., Chen, C. P., Hong, M., Kwo, J., Tsai, W., Wang, Y. C.
Format: Article
Language:English
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Summary:Self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs) using ultrahigh-vacuum deposited Al2O3∕Ga2O3(Gd2O3) (GGO) dual-layer dielectrics and a TiN metal gate were fabricated. For a In0.53Ga0.47As MOSFET using a gate dielectric of Al2O3(2nmthick)∕GGO(5nmthick), a maximum drain current of 1.05A∕mm, a transconductance of 714mS∕mm, and a peak mobility of 1300cm2∕Vs have been achieved, the highest ever reported for III-V inversion-channel devices of 1μm gate length.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2956393