The effect of doping the M -barrier in very long-wave type-II InAs ∕ GaSb heterodiodes

A variation on the standard homodiode type-II superlattice with an M -barrier between the π -region and the n -region is shown to suppress the dark currents. By determining the optimal doping level of the M -superlattice, dark current densities of 4.95 mA ∕ cm 2 and quantum efficiencies in excess of...

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Bibliographic Details
Published in:Applied physics letters 2008-07, Vol.93 (3), p.031107-031107-3
Main Authors: Hoffman, Darin, Nguyen, Binh-Minh, Huang, Edward Kwei-wei, Delaunay, Pierre-Yves, Razeghi, Manijeh, Tidrow, Meimei Z., Pellegrino, Joe
Format: Article
Language:English
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Summary:A variation on the standard homodiode type-II superlattice with an M -barrier between the π -region and the n -region is shown to suppress the dark currents. By determining the optimal doping level of the M -superlattice, dark current densities of 4.95 mA ∕ cm 2 and quantum efficiencies in excess of 20% have been demonstrated at the moderate reverse bias of 50 mV ; allowing for near background-limted performance with a Johnson-noise detectivity of 3.11 × 10 10 cm Hz ∕ W at 77 K for 14.58 μ m cutoff wavelength for large area diodes without passivation. This is comparable to values for the state-of-the-art HgCdTe photodiodes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2963980