Double gate GaInZnO thin film transistors

We fabricated gallium-indium-zinc oxide (GIZO) thin film transistors (TFTs) having a double-gated (DG) structure and studied the back gate effect on device performance. DG GIZO TFTs showed better threshold voltage ( V th ) , swing factor ( S ) , and on/off current than those with a single gate. With...

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Bibliographic Details
Published in:Applied physics letters 2008-08, Vol.93 (6), p.063505-063505-3
Main Authors: Lim, Hyuck, Yin, Huaxiang, Park, Jin-Seong, Song, Ihun, Kim, Changjung, Park, JaeChul, Kim, SunIl, Kim, Sang-Wook, Lee, Chang Bum, Kim, Yong C., Park, Young Soo, Kang, Donghun
Format: Article
Language:English
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Summary:We fabricated gallium-indium-zinc oxide (GIZO) thin film transistors (TFTs) having a double-gated (DG) structure and studied the back gate effect on device performance. DG GIZO TFTs showed better threshold voltage ( V th ) , swing factor ( S ) , and on/off current than those with a single gate. With the variation in back gate bias, the device performance significantly changes due to the modification of field distribution near the GIZO channel. It is believed that our DG structure is an effective way to improve the performance of GIZO oxide transistors and suppress the formation of an accumulation layer at the back surface.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2967456