Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes

• Published in: Journal of applied physics 2008-08, Vol.104 (4)
• Main Authors: O’Sullivan, B. J., Mitsuhashi, R., Pourtois, G., Aoulaiche, M., Houssa, M., Van der Heyden, N., Schram, T., Harada, Y., Groeseneken, G., Absil, P., Biesemans, S., Nakabayashi, T., Ikeda, A., Niwa, M.
• Format: Article
• Language: English
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.2967819

A significant difference in the magnitude of the threshold voltage (Vt) reduction achieved by lanthanum oxide (La2O3) incorporation in ultra-thin dielectrics is observed for TaCx and TaCxNy electrodes. This is explained by dielectric consumption resulting from the thermodynamically unstable TaCx electrode, which gives rise to electrically active oxygen vacancies in the high-permittivity dielectric. We report extensively on the presence and origins of an aberrant negative Vt shift during positive bias temperature instability stressing and, conversely, a positive shift during negative bias temperature instability stressing for La2O3 capped HfSiON dielectrics observed for TaCx electroded films, not seen for the TaCxNy case. Although, oxygen vacancies are inherent due to the differences in electronic configuration between lanthanum and hafnium, this effect is exacerbated by the electrode instability, which is reflected in the Vt dependence.