Low Schottky barrier height for silicides on n -type Si (100) by interfacial selenium segregation during silicidation

The electron Schottky barrier height Φ Bn modulation for NiSi and PtSi formed on selenium-implanted n -type Si (100) has been experimentally investigated. Selenium (Se) segregation is observed at the silicide / n -Si ( 100 ) interface during silicidation process. Φ Bn of 83 and 120 meV were achieved...

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Bibliographic Details
Published in:Applied physics letters 2008-08, Vol.93 (7), p.072103-072103-3
Main Authors: Wong, Hoong-Shing, Chan, Lap, Samudra, Ganesh, Yeo, Yee-Chia
Format: Article
Language:English
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Summary:The electron Schottky barrier height Φ Bn modulation for NiSi and PtSi formed on selenium-implanted n -type Si (100) has been experimentally investigated. Selenium (Se) segregation is observed at the silicide / n -Si ( 100 ) interface during silicidation process. Φ Bn of 83 and 120 meV were achieved for Se segregated NiSi and PtSi on n -Si (100) interfaces, respectively. Contrary to previously reported Fermi level depinning effect in monolayer Se-passivated n -Si (100), the low Φ Bn achieved in this work points to metal silicide Fermi level pinning near to conduction band E C of n -Si (100).
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2970958