Indium-free transparent organic light emitting diodes with Al doped ZnO electrodes grown by atomic layer and pulsed laser deposition

We present highly efficient transparent organic light emitting diodes (OLEDs) with Al doped ZnO (AZO) electrodes prepared by atomic layer deposition and pulsed laser deposition (PLD). The power and current efficiencies exceed 27 lm/W and 44 cd/A at a brightness level of 100   cd / m 2 , respectively...

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Bibliographic Details
Published in:Applied physics letters 2008-08, Vol.93 (7), p.073308-073308-3
Main Authors: Meyer, J., Görrn, P., Hamwi, S., Johannes, H.-H., Riedl, T., Kowalsky, W.
Format: Article
Language:English
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Summary:We present highly efficient transparent organic light emitting diodes (OLEDs) with Al doped ZnO (AZO) electrodes prepared by atomic layer deposition and pulsed laser deposition (PLD). The power and current efficiencies exceed 27 lm/W and 44 cd/A at a brightness level of 100   cd / m 2 , respectively. At the same time, the transmissivity of the devices is above 73% in the visible part of the spectrum. Owing to an efficient WO 3 buffer layer and an optimized PLD process for the deposition of the top AZO electrode, the OLEDs show leakage current densities as low as 3 × 10 − 5   mA / cm 2 at a reverse bias of 6 V. Therefore, our study paves the way for indium-free, see-through OLED displays.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2975176