Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor

Ga-doped ZnO (GZO) thin film transistors (TFTs) were fabricated based on the solution-processed method and GZO TFTs were investigated according to the variation of the Ga doping concentration [ Ga ∕ Zn (%)]. A field-effect mobility of 1.63 cm 2 ∕ V s and a drain current on/off ratio of 4.17 × 10 6 w...

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Bibliographic Details
Published in:Applied physics letters 2008-08, Vol.93 (8), p.083508-083508-3
Main Authors: Park, Won Jun, Shin, Hyun Soo, Ahn, Byung Du, Kim, Gun Hee, Lee, Seung Min, Kim, Kyung Ho, Kim, Hyun Jae
Format: Article
Language:English
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Summary:Ga-doped ZnO (GZO) thin film transistors (TFTs) were fabricated based on the solution-processed method and GZO TFTs were investigated according to the variation of the Ga doping concentration [ Ga ∕ Zn (%)]. A field-effect mobility of 1.63 cm 2 ∕ V s and a drain current on/off ratio of 4.17 × 10 6 were observed in the 5.4 % Ga-doped TFT. This result shows good agreement with its structural properties and electrical properties of the GZO channel layer. It is believed that the optimal and desirable electrical properties of the TFTs can be obtained by adjusting the Ga doping concentration.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2976309