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Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor
Ga-doped ZnO (GZO) thin film transistors (TFTs) were fabricated based on the solution-processed method and GZO TFTs were investigated according to the variation of the Ga doping concentration [ Ga ∕ Zn (%)]. A field-effect mobility of 1.63 cm 2 ∕ V s and a drain current on/off ratio of 4.17 × 10 6 w...
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| Published in: | Applied physics letters 2008-08, Vol.93 (8), p.083508-083508-3 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c350t-a907e49f0470ac354f57edbd4271b79bfda316dccd0164e2fc4dedd572d4a9e63 |
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| cites | cdi_FETCH-LOGICAL-c350t-a907e49f0470ac354f57edbd4271b79bfda316dccd0164e2fc4dedd572d4a9e63 |
| container_end_page | 083508-3 |
| container_issue | 8 |
| container_start_page | 083508 |
| container_title | Applied physics letters |
| container_volume | 93 |
| creator | Park, Won Jun Shin, Hyun Soo Ahn, Byung Du Kim, Gun Hee Lee, Seung Min Kim, Kyung Ho Kim, Hyun Jae |
| description | Ga-doped ZnO (GZO) thin film transistors (TFTs) were fabricated based on the solution-processed method and GZO TFTs were investigated according to the variation of the Ga doping concentration [
Ga
∕
Zn
(%)]. A field-effect mobility of
1.63
cm
2
∕
V
s
and a drain current on/off ratio of
4.17
×
10
6
were observed in the 5.4 % Ga-doped TFT. This result shows good agreement with its structural properties and electrical properties of the GZO channel layer. It is believed that the optimal and desirable electrical properties of the TFTs can be obtained by adjusting the Ga doping concentration. |
| doi_str_mv | 10.1063/1.2976309 |
| format | article |
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Ga
∕
Zn
(%)]. A field-effect mobility of
1.63
cm
2
∕
V
s
and a drain current on/off ratio of
4.17
×
10
6
were observed in the 5.4 % Ga-doped TFT. This result shows good agreement with its structural properties and electrical properties of the GZO channel layer. It is believed that the optimal and desirable electrical properties of the TFTs can be obtained by adjusting the Ga doping concentration.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2976309</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2008-08, Vol.93 (8), p.083508-083508-3</ispartof><rights>2008 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-a907e49f0470ac354f57edbd4271b79bfda316dccd0164e2fc4dedd572d4a9e63</citedby><cites>FETCH-LOGICAL-c350t-a907e49f0470ac354f57edbd4271b79bfda316dccd0164e2fc4dedd572d4a9e63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2976309$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,782,784,795,27924,27925,76383</link.rule.ids></links><search><creatorcontrib>Park, Won Jun</creatorcontrib><creatorcontrib>Shin, Hyun Soo</creatorcontrib><creatorcontrib>Ahn, Byung Du</creatorcontrib><creatorcontrib>Kim, Gun Hee</creatorcontrib><creatorcontrib>Lee, Seung Min</creatorcontrib><creatorcontrib>Kim, Kyung Ho</creatorcontrib><creatorcontrib>Kim, Hyun Jae</creatorcontrib><title>Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor</title><title>Applied physics letters</title><description>Ga-doped ZnO (GZO) thin film transistors (TFTs) were fabricated based on the solution-processed method and GZO TFTs were investigated according to the variation of the Ga doping concentration [
Ga
∕
Zn
(%)]. A field-effect mobility of
1.63
cm
2
∕
V
s
and a drain current on/off ratio of
4.17
×
10
6
were observed in the 5.4 % Ga-doped TFT. This result shows good agreement with its structural properties and electrical properties of the GZO channel layer. It is believed that the optimal and desirable electrical properties of the TFTs can be obtained by adjusting the Ga doping concentration.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp1kE9LAzEQxYMoWKsHv0GuHlInm-zGXAQpWguFXvTSy5LmT420yZJEod_e1PbiQXgw84YfA-8hdEthQqFj93TSSNExkGdoREEIwih9OEcjAGCkky29RFc5f1bbNoyN0Goevm0ufqOKjwFXmTj4sMHGDjYYG_QeR4dz3H4dADKkqG3O1uCZIhWtyyoscfnwATu_3eGSVMg-l5iu0YVT22xvTnOM3l-e36avZLGczadPC6JZC4UoCcJy6YALUPXEXSusWRveCLoWcu2MYrQzWhugHbeN09xYY1rRGK6k7dgY3R3_6hRzTtb1Q_I7lfY9hf5QSk_7UymVfTyyWfvyG_l_-E8zfVWNy34Ar_Vryw</recordid><startdate>20080825</startdate><enddate>20080825</enddate><creator>Park, Won Jun</creator><creator>Shin, Hyun Soo</creator><creator>Ahn, Byung Du</creator><creator>Kim, Gun Hee</creator><creator>Lee, Seung Min</creator><creator>Kim, Kyung Ho</creator><creator>Kim, Hyun Jae</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20080825</creationdate><title>Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor</title><author>Park, Won Jun ; Shin, Hyun Soo ; Ahn, Byung Du ; Kim, Gun Hee ; Lee, Seung Min ; Kim, Kyung Ho ; Kim, Hyun Jae</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-a907e49f0470ac354f57edbd4271b79bfda316dccd0164e2fc4dedd572d4a9e63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Won Jun</creatorcontrib><creatorcontrib>Shin, Hyun Soo</creatorcontrib><creatorcontrib>Ahn, Byung Du</creatorcontrib><creatorcontrib>Kim, Gun Hee</creatorcontrib><creatorcontrib>Lee, Seung Min</creatorcontrib><creatorcontrib>Kim, Kyung Ho</creatorcontrib><creatorcontrib>Kim, Hyun Jae</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Won Jun</au><au>Shin, Hyun Soo</au><au>Ahn, Byung Du</au><au>Kim, Gun Hee</au><au>Lee, Seung Min</au><au>Kim, Kyung Ho</au><au>Kim, Hyun Jae</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor</atitle><jtitle>Applied physics letters</jtitle><date>2008-08-25</date><risdate>2008</risdate><volume>93</volume><issue>8</issue><spage>083508</spage><epage>083508-3</epage><pages>083508-083508-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Ga-doped ZnO (GZO) thin film transistors (TFTs) were fabricated based on the solution-processed method and GZO TFTs were investigated according to the variation of the Ga doping concentration [
Ga
∕
Zn
(%)]. A field-effect mobility of
1.63
cm
2
∕
V
s
and a drain current on/off ratio of
4.17
×
10
6
were observed in the 5.4 % Ga-doped TFT. This result shows good agreement with its structural properties and electrical properties of the GZO channel layer. It is believed that the optimal and desirable electrical properties of the TFTs can be obtained by adjusting the Ga doping concentration.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2976309</doi></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2008-08, Vol.93 (8), p.083508-083508-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_2976309 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP - American Institute of Physics |
| title | Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor |
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