Germanium substrate loss during low temperature annealing and its influence on ion-implanted phosphorous dose loss

In this work we demonstrate germanium loss from uncapped substrates during low temperature drive-in annealing in inert ambient. An Arrhenius law with an activation energy of 2.03 eV describes the measured loss rate of germanium as a function of temperature. Accurate simulations of implanted phosphor...

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Bibliographic Details
Published in:Applied physics letters 2008-09, Vol.93 (10), p.101910-101910-3
Main Authors: Ioannou, N., Skarlatos, D., Tsamis, C., Krontiras, C. A., Georga, S. N., Christofi, A., McPhail, D. S.
Format: Article
Language:English
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Summary:In this work we demonstrate germanium loss from uncapped substrates during low temperature drive-in annealing in inert ambient. An Arrhenius law with an activation energy of 2.03 eV describes the measured loss rate of germanium as a function of temperature. Accurate simulations of implanted phosphorous profiles in nonpassivated substrates have been performed considering the extracted germanium loss rate. A capping layer on the germanium surface reduces phosphorous dose loss, with Si 3 N 4 being more efficient than SiO 2 . The capping layer material also affects the extent of dopant concentration-dependent diffusion for high dose phosphorous implantation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2981522