Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode

Structural and resistance switching properties were investigated in the CoO resistance random access memory (RRAM) with the Ta electrode. The intermediate layer consisting of Co and Ta oxides was confirmed at the interface by the transmission electron microscopy and electron energy loss spectroscopy...

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Bibliographic Details
Published in:Applied physics letters 2008-09, Vol.93 (11), p.113504-113504-3
Main Authors: Shima, Hisashi, Takano, Fumiyoshi, Muramatsu, Hidenobu, Akinaga, Hiro, Tamai, Yukio, Inque, Isao H., Takagi, Hidenori
Format: Article
Language:English
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Summary:Structural and resistance switching properties were investigated in the CoO resistance random access memory (RRAM) with the Ta electrode. The intermediate layer consisting of Co and Ta oxides was confirmed at the interface by the transmission electron microscopy and electron energy loss spectroscopy. The great affinity with oxygen in Ta together with a high resistivity of the Ta oxide improves the operational performance of RRAM. The controllability of the resistance after forming and the low-current operation property were substantially improved by using the load resistor connected in series with CoO RRAM with the Ta electrode. The reset current less than 0.2 mA and the switching speed faster than 20 ns were demonstrated.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2982426