Graphene segregated on Ni surfaces and transferred to insulators

We report an approach to synthesize high quality graphene by surface segregation and substrate transfer. Graphene was segregated from Ni surface under the ambient pressure by dissolving carbon in Ni at high temperatures followed by cooling down with various rates. Different cooling rates led to diff...

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Bibliographic Details
Published in:Applied physics letters 2008-09, Vol.93 (11), p.113103-113103-3
Main Authors: Yu, Qingkai, Lian, Jie, Siriponglert, Sujitra, Li, Hao, Chen, Yong P., Pei, Shin-Shem
Format: Article
Language:English
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Summary:We report an approach to synthesize high quality graphene by surface segregation and substrate transfer. Graphene was segregated from Ni surface under the ambient pressure by dissolving carbon in Ni at high temperatures followed by cooling down with various rates. Different cooling rates led to different segregation behaviors, strongly affecting the thickness and quality of the graphene films. Electron microscopy and Raman spectroscopy indicated that the graphene films synthesized with medium cooling rates have high quality crystalline structure and well-controlled thicknesses. The graphene films were transferred to insulating substrates by wet etching and found to maintain their high quality.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2982585