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Characteristics of GaN-based photonic crystal surface emitting lasers
Characteristics of GaN-based photonic crystal surface emitting lasers (PCSELs) were investigated and analyzed. The GaN-based PCSEL emits a blue wavelength at 401.8 nm with a linewidth of 1.6 Å and shows a threshold energy density about 2.7 mJ / cm 2 under the optical pumping at room temperature....
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Published in: | Applied physics letters 2008-09, Vol.93 (11), p.111111-111111-3 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Characteristics of GaN-based photonic crystal surface emitting lasers (PCSELs) were investigated and analyzed. The GaN-based PCSEL emits a blue wavelength at 401.8 nm with a linewidth of
1.6
Å
and shows a threshold energy density about
2.7
mJ
/
cm
2
under the optical pumping at room temperature. The lasing wavelength emitted from PCSELs with different lattice constants occurs at the calculated band edges showing different polarization angles due to the light diffracted in specific directions, corresponding exactly to
Γ
,
K
, and
M
directions in the
K
-space. Furthermore, the PCSEL also shows a spontaneous emission coupling efficiency
β
of about
5
×
10
−
3
and a characteristic temperature of 148 K. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2986527 |