Refractive index of Si-doped n -InGaAs

The dependence of the refractive index of Si-doped n -InGaAs on carrier density was investigated. The shift in the refractive index from that of undoped InGaAs was found to be mainly caused by the band-filling effect, the band-gap shrinkage effect, and the plasma effect. Model calculations agreed be...

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Bibliographic Details
Published in:Journal of applied physics 2008-10, Vol.104 (7), p.073507-073507-4
Main Authors: Gozu, Shin-ichiro, Mozume, Teruo, Ishikawa, Hiroshi
Format: Article
Language:English
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Summary:The dependence of the refractive index of Si-doped n -InGaAs on carrier density was investigated. The shift in the refractive index from that of undoped InGaAs was found to be mainly caused by the band-filling effect, the band-gap shrinkage effect, and the plasma effect. Model calculations agreed better with the measured data when the conduction band nonparabolicity effect was taken into account. Nevertheless, the calculated refractive index values were slightly lower than the experimental values. Because the difference was larger for photon energies close to the band-gap energy of InGaAs, the shift in the refractive index is attributed to the absorption tail effect that appears near the band-gap energy due to Si doping.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2987473