A 500 MHz carbon nanotube transistor oscillator

Operation of a carbon nanotube field effect transistor (FET) oscillator at a record frequency of 500 MHz is described. The FET was fabricated using a large parallel array of single-walled nanotubes grown by chemical vapor deposition on ST-quartz substrates. Matching of the gate capacitance with a se...

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Bibliographic Details
Published in:Applied physics letters 2008-09, Vol.93 (12), p.123506-123506-2
Main Authors: Pesetski, A. A., Baumgardner, J. E., Krishnaswamy, S. V., Zhang, H., Adam, J. D., Kocabas, C., Banks, T., Rogers, J. A.
Format: Article
Language:English
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Summary:Operation of a carbon nanotube field effect transistor (FET) oscillator at a record frequency of 500 MHz is described. The FET was fabricated using a large parallel array of single-walled nanotubes grown by chemical vapor deposition on ST-quartz substrates. Matching of the gate capacitance with a series inductor enabled greater than unity net oscillator loop gain to be achieved at 500 MHz.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2988824