p -type Fermi level pinning at a Si:Al2O3 model interface

To understand the origin of p-type work function shifts in Al2O3-based gate stacks, we constructed two O-rich Si:Al2O3 interface models. A small periodic model is found to be insulating, with no interface states in the Si gap. A larger amorphous Al2O3 interface is found to have its Fermi level pinne...

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Bibliographic Details
Published in:Applied physics letters 2008-09, Vol.93 (12)
Main Authors: Fonseca, L. R. C., Liu, D., Robertson, J.
Format: Article
Language:English
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Summary:To understand the origin of p-type work function shifts in Al2O3-based gate stacks, we constructed two O-rich Si:Al2O3 interface models. A small periodic model is found to be insulating, with no interface states in the Si gap. A larger amorphous Al2O3 interface is found to have its Fermi level pinned in the Si valence band, due to an oxygen deficiency at the interface. This is a mechanism for p-type Fermi level shifts found in gate stacks containing Al2O3 layers.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2991287