Carrier transport mechanisms of nonvolatile memory devices based on nanocomposites consisting of ZnO nanoparticles with polymethylmethacrylate nanocomposites sandwiched between two C60 layers

Transmission electron microscope images showed that ZnO nanoparticles were formed in a polymethylmethacrylate (PMMA) layer. Current-voltage (I-V) curves for the Al∕C60∕ZnO nanoparticles embedded in the PMMA layer/C60/indium tin oxide (ITO) device at 300K showed a current bistability with a large on/...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2008-09, Vol.93 (13)
Main Authors: Park, Kyu Ha, Jung, Jae Hun, Li, Fushan, Son, Dong Ick, Kim, Tae Whan
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Transmission electron microscope images showed that ZnO nanoparticles were formed in a polymethylmethacrylate (PMMA) layer. Current-voltage (I-V) curves for the Al∕C60∕ZnO nanoparticles embedded in the PMMA layer/C60/indium tin oxide (ITO) device at 300K showed a current bistability with a large on/off ratio of 104, which was much larger than the on/off ratio of the device without C60 layers, indicative of significant enhancement of memory storage. Carrier transport mechanisms of the memory effects for the Al∕C60∕ZnO nanoparticles embedded in the PMMA layer/C60/ITO device are described on the basis of the I-V results.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2992203