Violet-light spontaneous and stimulated emission from ultrathin In-rich InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

We investigated the spontaneous and stimulated emission properties of violet-light-emitting ultrathin In-rich InGaN/GaN multiple quantum wells (MQWs) with indium content of 60%–70%. The Stokes shift was smaller than that of In-poor InGaN MQWs, and the emission peak position at 3.196 eV was kept cons...

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Published in:Applied physics letters 2008-10, Vol.93 (16)
Main Authors: Kwack, Ho-Sang, Kwon, Bong-Joon, Chung, Jin-Soo, Cho, Yong-Hoon, Kwon, Soon-Yong, Kim, Hee Jin, Yoon, Euijoon
Format: Article
Language:English
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Summary:We investigated the spontaneous and stimulated emission properties of violet-light-emitting ultrathin In-rich InGaN/GaN multiple quantum wells (MQWs) with indium content of 60%–70%. The Stokes shift was smaller than that of In-poor InGaN MQWs, and the emission peak position at 3.196 eV was kept constant with increasing pumping power, indicating negligible quantum confined Stark effect in ultrathin In-rich InGaN MQWs despite of high indium content. Optically pumped stimulated emission performed at room temperature was observed at 3.21 eV, the high-energy side of spontaneous emission, when the pumping power density exceeds ∼31 kW/cm2.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3002300