Effective surface passivation methodologies for high performance germanium metal oxide semiconductor field effect transistors

We demonstrate methodologies to improve the interface characteristics between a germanium (Ge) substrate and high- k gate dielectrics. GeON and SiO x were investigated as passivating layers on a Ge surface. Smaller hysteresis and interface state density ( D it ) were obtained using SiO x interface l...

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Bibliographic Details
Published in:Applied physics letters 2008-11, Vol.93 (19), p.192115-192115-3
Main Authors: Na, H. J., Lee, J. C., Heh, D., Sivasubramani, P., Kirsch, P. D., Oh, J. W., Majhi, P., Rivillon, S., Chabal, Y. J., Lee, B. H., Choi, R.
Format: Article
Language:English
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Summary:We demonstrate methodologies to improve the interface characteristics between a germanium (Ge) substrate and high- k gate dielectrics. GeON and SiO x were investigated as passivating layers on a Ge surface. Smaller hysteresis and interface state density ( D it ) were obtained using SiO x interface layer and p -type metal oxide semiconductor field effect transistors (MOSFETs) fabricated with a gate stack of Ge / SiO x / HfSiO / WN showed about two times higher effective mobility compared to universal Si / SiO 2 MOSFET. Because the formation of GeO x at the interface resulted in higher hysteresis and equivalent oxide thickness, the effective suppression of growth of unstable GeO x by SiO x interface layer contributed to the good device characteristics of the fabricated devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3028025