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Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region

We have fabricated and characterized GaN-based vertical cavity surface emitting lasers (VCSELs) with a unique active region structure, in which three sets of InGaN asymmetric coupled quantum wells are placed in a half-wavelength ( 0.5 λ ) length. Lasing action was achieved under optical pumping at r...

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Bibliographic Details
Published in:Applied physics letters 2008-11, Vol.93 (19), p.191118-191118-3
Main Authors: Zhang, Jiang-Yong, Cai, Li-E, Zhang, Bao-Ping, Li, Shui-Qing, Lin, Feng, Shang, Jing-Zhi, Wang, Du-Xiang, Lin, Ke-Chuang, Yu, Jin-Zhong, Wang, Qi-Ming
Format: Article
Language:English
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Summary:We have fabricated and characterized GaN-based vertical cavity surface emitting lasers (VCSELs) with a unique active region structure, in which three sets of InGaN asymmetric coupled quantum wells are placed in a half-wavelength ( 0.5 λ ) length. Lasing action was achieved under optical pumping at room temperature with a threshold pumping energy density of about 6.5 mJ ∕ cm 2 . The laser emitted a blue light at 449.5 nm with a narrow linewidth below 0.1 nm and had a high spontaneous emission factor of about 3.0 × 10 − 2 . The results indicate that this active region structure is useful in reducing the process difficulties and improving the threshold characteristics of GaN-based VCSELs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3030876