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Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region
We have fabricated and characterized GaN-based vertical cavity surface emitting lasers (VCSELs) with a unique active region structure, in which three sets of InGaN asymmetric coupled quantum wells are placed in a half-wavelength ( 0.5 λ ) length. Lasing action was achieved under optical pumping at r...
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Published in: | Applied physics letters 2008-11, Vol.93 (19), p.191118-191118-3 |
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Main Authors: | , , , , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We have fabricated and characterized GaN-based vertical cavity surface emitting lasers (VCSELs) with a unique active region structure, in which three sets of InGaN asymmetric coupled quantum wells are placed in a half-wavelength
(
0.5
λ
)
length. Lasing action was achieved under optical pumping at room temperature with a threshold pumping energy density of about
6.5
mJ
∕
cm
2
. The laser emitted a blue light at
449.5
nm
with a narrow linewidth below
0.1
nm
and had a high spontaneous emission factor of about
3.0
×
10
−
2
. The results indicate that this active region structure is useful in reducing the process difficulties and improving the threshold characteristics of GaN-based VCSELs. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3030876 |