Control of oxidation and reduction reactions at HfSiO∕Si interfaces through N exposure or incorporation

Using synchrotron-radiation photoemission spectroscopy, we have investigated oxidation and reduction reactions of HfSiO(N)∕Si gate stack structures annealed in a N2 or O2 atmosphere. It is found that both oxidation and reduction reactions can be suppressed by using nitrogen-incorporated HfSiO films...

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Published in:Applied physics letters 2008-11, Vol.93 (21)
Main Authors: Kamada, H., Tanimura, T., Toyoda, S., Kumigashira, H., Oshima, M., Liu, G. L., Liu, Z., Ikeda, K.
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cited_by cdi_FETCH-LOGICAL-c225t-25b4e98231605bbda35c6f800386246d585dce72a2b4b11004be7ece423786333
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container_issue 21
container_start_page
container_title Applied physics letters
container_volume 93
creator Kamada, H.
Tanimura, T.
Toyoda, S.
Kumigashira, H.
Oshima, M.
Liu, G. L.
Liu, Z.
Ikeda, K.
description Using synchrotron-radiation photoemission spectroscopy, we have investigated oxidation and reduction reactions of HfSiO(N)∕Si gate stack structures annealed in a N2 or O2 atmosphere. It is found that both oxidation and reduction reactions can be suppressed by using nitrogen-incorporated HfSiO films in the annealing process at proper partial pressure of N2 gas (PN2∼100Torr). The detailed analysis of “SiO2 equivalent thicknesses” for annealed HfSiO and HfSiON films reveals that ambient N2 gas suppresses only the reduction reaction, while nitrogen atoms incorporated in dielectrics suppress both oxidation and reduction reactions.
doi_str_mv 10.1063/1.3036894
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title Control of oxidation and reduction reactions at HfSiO∕Si interfaces through N exposure or incorporation
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