Room temperature ferromagnetism in Sn1−xVxO2 films prepared by sol-gel method

• Published in: Journal of applied physics 2008-12, Vol.104 (12)
• Main Authors: Zhang, Li, Ge, Shihui, Zuo, Yalu, Zhou, Xueyun, Xiao, Yuhua, Yan, Shiming, Han, Xiufeng, Wen, Zhenchao
• Format: Article
• Language: English
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.3041627

The structure and magnetic properties of Sn1−xVxO2 (x=0.02–0.22) thin films fabricated on Si (111) substrate using a sol-gel method and spin coating technique have been investigated. All the samples have pure rutile polycrystalline structure and exhibit room temperature ferromagnetism. The magnetic moment per V reaches 2.92μB for the Sn0.98V0.02O2 film and drops rapidly as V content is increased. X-ray photoelectron spectroscopy study reveals that vanadium is in V4+ chemical state. Various annealing treatments were performed to explore the origin of the ferromagnetism. It is found that the ferromagnetism of Sn0.98V0.02O2 film disappears after annealing in a rich-oxygen atmosphere and occurs again after annealing in a low vacuum condition. Furthermore, an annealing in Sn vapor leads to the decrease in ferromagnetism. These results confirm that the oxygen vacancies play a critical role in introducing ferromagnetism of Sn1−xVxO2 films; therefore, the origin of the ferromagnetism in our samples can be understood in the framework of the bound magnetic polaron model.