Determining the optimum pentacene channel thickness on hydrophobic and hydrophilic dielectric surface

We report that the optimum pentacene channel thickness is dependent on the surface energy state of its dielectric substrate. Pentacene thin-film transistor (TFT) with hydrophobic substrate displays a peak linear mobility at an optimum channel thickness of 50 nm , below or above which the linear mobi...

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Bibliographic Details
Published in:Applied physics letters 2008-12, Vol.93 (23), p.233301-233301-3
Main Authors: Mun, Sung-jin, Choi, Jeong-M., Lee, Kwang H., Lee, Kimoon, Im, Seongil
Format: Article
Language:English
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Summary:We report that the optimum pentacene channel thickness is dependent on the surface energy state of its dielectric substrate. Pentacene thin-film transistor (TFT) with hydrophobic substrate displays a peak linear mobility at an optimum channel thickness of 50 nm , below or above which the linear mobility decreases. In contrast, the linear mobility of the TFT with hydrophilic substrate monotonically increases until the channel thickness decreases to 15 nm . According to atomic force microscopy of 15 - nm -thin pentacene grown on the Si O 2 and poly-4-vinyphenol (PVP) dielectrics, the pentacene islands on PVP are not perfectly interconnected unlike the case on Si O 2 .
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3041634