High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes

Optical properties of staggered 530 nm InGaN/InGaN/GaN quantum-well (QW) light-emitting-diodes are investigated using the multiband effective mass theory. These results are compared with those of conventional 530 nm InGaN/GaN QW structures. A staggered InGaN/InGaN/GaN QW structure is shown to have m...

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Published in:Applied physics letters 2009-01, Vol.94 (4)
Main Authors: Park, Seoung-Hwan, Ahn, Doyeol, Kim, Jong-Wook
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Language:English
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Kim, Jong-Wook
description Optical properties of staggered 530 nm InGaN/InGaN/GaN quantum-well (QW) light-emitting-diodes are investigated using the multiband effective mass theory. These results are compared with those of conventional 530 nm InGaN/GaN QW structures. A staggered InGaN/InGaN/GaN QW structure is shown to have much larger spontaneous emission than a conventional InGaN/GaN QW structure. This can be explained by the fact that a staggered QW structure has much larger matrix element than a conventional QW structure because a spatial separation between electron and hole wave functions is substantially reduced with the inclusion of a staggered InGaN layer. A staggered QW structure shows that the peak position at a high carrier density (530 nm) is similar to that at a noninjection level.
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title High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes
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