ErAs epitaxial Ohmic contacts to InGaAs/InP

We report epitaxial ErAs semimetal Ohmic contacts onto n -type In 0.53 Ga 0.47 As grown on InP. The contacts were formed by molecular beam epitaxial growth of ErAs on InAs/InGaAs. Transmission line measurements showed minimum specific contact resistivities of 1.5 ± 0.4   Ω μ m 2 (horizontal specific...

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Bibliographic Details
Published in:Applied physics letters 2009-02, Vol.94 (8), p.083505-083505-3
Main Authors: Singisetti, Uttam, Zimmerman, Jeramy D., Wistey, Mark A., Cagnon, Joël, Thibeault, Brian J., Rodwell, Mark J. W., Gossard, Arthur C., Stemmer, Susanne, Bank, Seth R.
Format: Article
Language:English
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Summary:We report epitaxial ErAs semimetal Ohmic contacts onto n -type In 0.53 Ga 0.47 As grown on InP. The contacts were formed by molecular beam epitaxial growth of ErAs on InAs/InGaAs. Transmission line measurements showed minimum specific contact resistivities of 1.5 ± 0.4   Ω μ m 2 (horizontal specific contact resistivity ρ H , 4.20   Ω μ m ) for the ErAs/InAs/InGaAs contact. The extracted contact resistance is larger than the true value because of the lateral oxidation of ErAs. The contacts degrade over time and at elevated temperatures because of the oxidation of the ErAs, making it difficult to use as surface contacts, but they are suitable as low-resistance buried contacts.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3087313