Physical properties of amorphous InGaZnO4 films doped with Mn

Amorphous InGaZnO4 (a-IGZO) films doped with various concentrations of Mn have been fabricated by using pulsed-laser deposition technique. Optical, electrical, and magnetic properties of the prepared Mn-doped a-IGZO films were investigated. The resistivity, carrier concentration, and carrier mobilit...

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Published in:Applied physics letters 2009-03, Vol.94 (9)
Main Authors: Liu, Shiu-Jen, Fang, Hau-Wei, Su, Shih-Hao, Li, Chia-Hung, Cherng, Jyh-Shiarn, Hsieh, Jang-Hsing, Juang, Jenh-Yih
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cited_by cdi_FETCH-LOGICAL-c229t-7e828680b1144ee018c723779406a5708ea7f1df4c7f6fc4d2bb9c9d79b15b813
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container_title Applied physics letters
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creator Liu, Shiu-Jen
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description Amorphous InGaZnO4 (a-IGZO) films doped with various concentrations of Mn have been fabricated by using pulsed-laser deposition technique. Optical, electrical, and magnetic properties of the prepared Mn-doped a-IGZO films were investigated. The resistivity, carrier concentration, and carrier mobility of the a-IGZO films were found to be, respectively, increased, decreased, and enhanced by Mn doping. Moreover, the optical transmission is slightly increased in the visible range and the optical band gaps are not affected in the Mn-doped films. Room-temperature ferromagnetism has been observed in the field-dependent magnetization measurements.
doi_str_mv 10.1063/1.3095505
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title Physical properties of amorphous InGaZnO4 films doped with Mn
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