Investigation of stability of the effective work function on LaAlO3 and La2Hf2O7

The stability of the effective work function (ϕeff) on La-based high-k materials was studied in detail by changing the annealing ambient and the gate dielectric stack. ϕeff for a LaAlO3/SiO2/Si stack with Pt gate electrode was not affected by the annealing ambient, whereas that for a Pt gate electro...

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Bibliographic Details
Published in:Journal of applied physics 2009-03, Vol.105 (6)
Main Authors: Suzuki, Masamichi, Kinoshita, Atsuhiro, Schimizu, Tatsuo, Koyama, Masato
Format: Article
Language:English
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Summary:The stability of the effective work function (ϕeff) on La-based high-k materials was studied in detail by changing the annealing ambient and the gate dielectric stack. ϕeff for a LaAlO3/SiO2/Si stack with Pt gate electrode was not affected by the annealing ambient, whereas that for a Pt gate electrode on an La2Hf2O7/SiO2/Si stack increased sharply when O2 annealing was performed after forming gas annealing (FGA). Comparison with the results for a stack without SiO2 indicates that this anomalous phenomenon in the La2Hf2O7/SiO2/Si stack is caused by oxygen-vacancy-related dipoles at La2Hf2O7/SiO2 interface produced by FGA.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3097776