Synthesis of ultrathin carbon films by direct current filtered cathodic vacuum arc

Filtered cathodic vacuum arc was used to synthesize ultrathin carbon films on silicon substrates. The depth profiles, near-surface chemical composition, fractions of tetrahedral ( s p 3 ) and trigonal ( s p 2 ) carbon atom hybridizations, roughness, and hardness of the carbon films were determined f...

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Bibliographic Details
Published in:Journal of applied physics 2009-04, Vol.105 (8), p.083305-083305-7
Main Authors: Zhang, H.-S., Komvopoulos, K.
Format: Article
Language:English
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Summary:Filtered cathodic vacuum arc was used to synthesize ultrathin carbon films on silicon substrates. The depth profiles, near-surface chemical composition, fractions of tetrahedral ( s p 3 ) and trigonal ( s p 2 ) carbon atom hybridizations, roughness, and hardness of the carbon films were determined from Monte Carlo ( T-DYN ) simulations and x-ray reflectivity (XRR), x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and surface force microscopy (SFM) measurements, respectively. Films of thickness of only a few nanometers possessed smaller s p 3 fractions than much thicker films. The effective hardness was found to depend on the s p 3 fraction and silicon-carbon composition profile. The formation of different carbon atom bonds, film growth mechanisms, and optimum process conditions for synthesizing ultrathin carbon films are interpreted in the context of T-DYN , XRR, XPS, AFM, and SFM results and surface bombardment, adsorption, and diffusion mechanisms.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3098254