Si/SiC bonded wafer: A route to carbon free SiO2 on SiC

This paper describes the thermal oxidation of Si/SiC heterojunction structures, produced using a layer-transfer process, as an alternative solution to fabricating SiC metal-oxide-semiconductor (MOS) devices with lower interface state densities (Dit). Physical characterization demonstrate that the tr...

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Published in:Applied physics letters 2009-03, Vol.94 (10)
Main Authors: Pérez-Tomás, A., Lodzinski, M., Guy, O. J., Jennings, M. R., Placidi, M., Llobet, J., Gammon, P. M., Davis, M. C., Covington, J. A., Burrows, S. E., Mawby, P. A.
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cited_by cdi_FETCH-LOGICAL-c330t-209f16d93a561a806f082f05c8289c32e807e772a847cd56d9e630f0fde56d633
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container_issue 10
container_start_page
container_title Applied physics letters
container_volume 94
creator Pérez-Tomás, A.
Lodzinski, M.
Guy, O. J.
Jennings, M. R.
Placidi, M.
Llobet, J.
Gammon, P. M.
Davis, M. C.
Covington, J. A.
Burrows, S. E.
Mawby, P. A.
description This paper describes the thermal oxidation of Si/SiC heterojunction structures, produced using a layer-transfer process, as an alternative solution to fabricating SiC metal-oxide-semiconductor (MOS) devices with lower interface state densities (Dit). Physical characterization demonstrate that the transferred Si layer is relatively smooth, uniform, and essentially monocrystalline. The Si on SiC has been totally or partially thermally oxidized at 900–1150 °C. Dit for both partially and completely oxidized silicon layers on SiC were significantly lower than Dit values for MOS capacitors fabricated via conventional thermal oxidation of SiC. The quality of the SiO2, formed by oxidation of a wafer-bonded silicon layer reported here has the potential to realize a number of innovative heterojunction concepts and devices, including the fabrication of high quality and reliable SiO2 gate oxides.
doi_str_mv 10.1063/1.3099018
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title Si/SiC bonded wafer: A route to carbon free SiO2 on SiC
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