The effect of the internal capacitance of InGaN-light emitting diode on the electrostatic discharge properties

The electrostatic discharge (ESD) properties of the InGaN-light emitting diode (LED) were investigated in terms of the internal capacitance of the InGaN-LED. The LEDs with higher internal capacitance were found to be more resistant to external ESD impulses. The internal capacitance of the InGaN-LED...

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Bibliographic Details
Published in:Applied physics letters 2009-03, Vol.94 (13)
Main Authors: Jeon, Soo-Kun, Lee, Jae-Gab, Park, Eun-Hyun, Jang, Jin, Lim, Jae-Gu, Kim, Seo-Kun, Park, Joong-Seo
Format: Article
Language:English
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Summary:The electrostatic discharge (ESD) properties of the InGaN-light emitting diode (LED) were investigated in terms of the internal capacitance of the InGaN-LED. The LEDs with higher internal capacitance were found to be more resistant to external ESD impulses. The internal capacitance of the InGaN-LED was controlled by the silicon doping level of the n-GaN layer bordering the active layer. The human body model ESD yield at −500 V was increased from 27% to 94% by increasing the internal capacitance. Moreover, the high ESD pass yield was maintained up to −7000 V.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3114974