Near-midgap deep levels in Al0.26Ga0.74N grown by metal-organic chemical vapor deposition

A deep level with an activation energy of 1.0 eV in n-type Al0.26Ga0.74N grown by metal-organic chemical vapor deposition was detected by deep-level transient spectroscopy (DLTS) with a sampling time window of several seconds. The deep-level density was 6×1015 cm−3. At the temperatures around which...

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Bibliographic Details
Published in:Applied physics letters 2009-04, Vol.94 (15)
Main Authors: Sugawara, Katsuya, Kotani, Junji, Hashizume, Tamotsu
Format: Article
Language:English
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Summary:A deep level with an activation energy of 1.0 eV in n-type Al0.26Ga0.74N grown by metal-organic chemical vapor deposition was detected by deep-level transient spectroscopy (DLTS) with a sampling time window of several seconds. The deep-level density was 6×1015 cm−3. At the temperatures around which the DLTS peaks were observed, capacitance transient was measured. Under the dark condition, a capacitance increase was observed, corresponding to the thermal emission of electrons from the level with 1.0 eV activation energy. After that, we observed a large capacitance increase under illumination with 2.3 eV photon energy. On the basis of potential simulation taking account of deep levels, we found that the photoinduced capacitance change arose from electron emission from additional near-midgap levels in energy ranging from EC−1.5 to EC−2.3 eV.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3119643