Parametric amplification in GaAs/AlOx waveguide

We report the direct proof of parametric amplification in a semiconductor waveguide. Thanks to low propagation losses and high nonlinear efficiency, we amplified an input signal at 2   μ m in a selectively oxidized GaAs/AlAs multilayer waveguide through the down conversion of a pump at 1   μ m . The...

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Bibliographic Details
Published in:Applied physics letters 2009-04, Vol.94 (17), p.171110-171110-3
Main Authors: Guillotel, E., Ravaro, M., Ghiglieno, F., Langlois, C., Ricolleau, C., Ducci, S., Favero, I, Leo, G.
Format: Article
Language:English
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Summary:We report the direct proof of parametric amplification in a semiconductor waveguide. Thanks to low propagation losses and high nonlinear efficiency, we amplified an input signal at 2   μ m in a selectively oxidized GaAs/AlAs multilayer waveguide through the down conversion of a pump at 1   μ m . The 4.5% single-pass gain measured for a 30 mW cw pump is compatible with parametric oscillation, provided that distributed and concentrated waveguide losses are further reduced.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3126482