Direct evidence of phase separation in Ge2Sb2Te5 in phase change memory devices

Phase change materials in phase change random access memory (PRAM) undergo very high electrical stress as well as thermal stress during operation. These can cause intrinsic problems in stability of the PRAM devices. We investigate the stability of Ge2Sb2Te5, the most common phase change material for...

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Bibliographic Details
Published in:Applied physics letters 2009-05, Vol.94 (19)
Main Authors: Kim, Cheolkyu, Kang, Dongmin, Lee, Tae-Yon, Kim, Kijoon H. P., Kang, Youn-Seon, Lee, Junho, Nam, Sung-Wook, Kim, Ki-Bum, Khang, Yoonho
Format: Article
Language:English
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Summary:Phase change materials in phase change random access memory (PRAM) undergo very high electrical stress as well as thermal stress during operation. These can cause intrinsic problems in stability of the PRAM devices. We investigate the stability of Ge2Sb2Te5, the most common phase change material for PRAM, under electrical stress. After multiple programming cycles, cross-sectional transmission electron microscopy and energy dispersive analysis show that electromigration as well as incongruent melting causes phase separation by mass movement by which the peak position of Sb and Ge lies shifted toward the cathode and that of Te toward the anode.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3127223