Spin field-effect transistor with electric control

The effects of spin polarization control in hybrid magnetic-nonmagnetic conductor structures have been considered. The concept of a transistor capable of generating and amplifying a spin-alternating signal has been proposed. The transistor principle is based on spatial separation of spin components...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2009-05, Vol.105 (10), p.103713-103713-6
Main Authors: Gurzhi, R. N., Kalinenko, A. N., Kopeliovich, A. I., Yanovsky, A. V.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The effects of spin polarization control in hybrid magnetic-nonmagnetic conductor structures have been considered. The concept of a transistor capable of generating and amplifying a spin-alternating signal has been proposed. The transistor principle is based on spatial separation of spin components and their control with electric gates in the "current-in-plane" hybrid magnetic-nonmagnetic conductor structure. This control is achieved through the effect of spin-electric signal transformation predicted in this study. Such transistor is feasible on the grounds of present-day materials and technologies.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3131823