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Effects of ultraviolet treatment on the contact resistivity and electronic transport at the Ti/ZnO interfaces
We report on the effect of ultraviolet (UV) treatment on the specific contact resistance ( ρ ) and electronic transport at the Ti/ZnO interfaces. The experimental results show the same barrier height of Ti/ZnO samples without UV treatment as Ti/ZnO samples with UV treatment and the higher ρ of Ti/Zn...
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| Published in: | Journal of applied physics 2009-07, Vol.106 (1), p.013701-013701-5 |
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| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c284t-c7ce799c02686546903ea0b2fcd4cd4a313dd4cf7504a91dcb6e5b5d01bec7b13 |
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| cites | cdi_FETCH-LOGICAL-c284t-c7ce799c02686546903ea0b2fcd4cd4a313dd4cf7504a91dcb6e5b5d01bec7b13 |
| container_end_page | 013701-5 |
| container_issue | 1 |
| container_start_page | 013701 |
| container_title | Journal of applied physics |
| container_volume | 106 |
| creator | Lin, Yow-Jon Tsai, Chia-Lung Liu, W.-R. Hsieh, W. F. Hsu, C.-H. Tsao, Hou-Yen Chu, Jian-An Chang, Hsing-Cheng |
| description | We report on the effect of ultraviolet (UV) treatment on the specific contact resistance
(
ρ
)
and electronic transport at the Ti/ZnO interfaces. The experimental results show the same barrier height of Ti/ZnO samples without UV treatment as Ti/ZnO samples with UV treatment and the higher
ρ
of Ti/ZnO samples with UV treatment than Ti/ZnO samples without UV treatment, suggesting the barrier-height independence of
ρ
. Based on the thermionic-emission model and x-ray photoelectron spectroscopy results, we found that the induced decrease in the number of the hydroxides at the surface region of ZnO by UV treatment resulted in decreases in the electron concentration near the surface region and the excess current component related to tunneling, increasing in
ρ
of Ti/ZnO samples. |
| doi_str_mv | 10.1063/1.3157201 |
| format | article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3157201</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>jap</sourcerecordid><originalsourceid>FETCH-LOGICAL-c284t-c7ce799c02686546903ea0b2fcd4cd4a313dd4cf7504a91dcb6e5b5d01bec7b13</originalsourceid><addsrcrecordid>eNp1kE1LAzEQQIMoWKsH_0GuHrbNbPYrF0FKrUKhl3rxsmSzE4xsk5KMhf57V1u8CQMzh_fm8Bi7BzEDUck5zCSUdS7ggk1ANCqry1JcsokQOWSNqtU1u0npUwiARqoJ2y2tRUOJB8u_Bor64MKAxCmiph164sFz-kBugidtiEdMLpE7ODpy7XuOw6jH4J0ZHe3TPkTimn6drZu_-w13njBabTDdsiurh4R35z1lb8_L7eIlW29Wr4undWbypqDM1AZrpYzIq6Yqi0oJiVp0uTV9MY6WIPvxsnUpCq2gN12FZVf2Ajo0dQdyyh5Of00MKUW07T66nY7HFkT706mF9txpZB9PbDKONLng_4fPsdpg279Y8hs-gXKv</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effects of ultraviolet treatment on the contact resistivity and electronic transport at the Ti/ZnO interfaces</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Lin, Yow-Jon ; Tsai, Chia-Lung ; Liu, W.-R. ; Hsieh, W. F. ; Hsu, C.-H. ; Tsao, Hou-Yen ; Chu, Jian-An ; Chang, Hsing-Cheng</creator><creatorcontrib>Lin, Yow-Jon ; Tsai, Chia-Lung ; Liu, W.-R. ; Hsieh, W. F. ; Hsu, C.-H. ; Tsao, Hou-Yen ; Chu, Jian-An ; Chang, Hsing-Cheng</creatorcontrib><description>We report on the effect of ultraviolet (UV) treatment on the specific contact resistance
(
ρ
)
and electronic transport at the Ti/ZnO interfaces. The experimental results show the same barrier height of Ti/ZnO samples without UV treatment as Ti/ZnO samples with UV treatment and the higher
ρ
of Ti/ZnO samples with UV treatment than Ti/ZnO samples without UV treatment, suggesting the barrier-height independence of
ρ
. Based on the thermionic-emission model and x-ray photoelectron spectroscopy results, we found that the induced decrease in the number of the hydroxides at the surface region of ZnO by UV treatment resulted in decreases in the electron concentration near the surface region and the excess current component related to tunneling, increasing in
ρ
of Ti/ZnO samples.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3157201</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Journal of applied physics, 2009-07, Vol.106 (1), p.013701-013701-5</ispartof><rights>2009 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c284t-c7ce799c02686546903ea0b2fcd4cd4a313dd4cf7504a91dcb6e5b5d01bec7b13</citedby><cites>FETCH-LOGICAL-c284t-c7ce799c02686546903ea0b2fcd4cd4a313dd4cf7504a91dcb6e5b5d01bec7b13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Lin, Yow-Jon</creatorcontrib><creatorcontrib>Tsai, Chia-Lung</creatorcontrib><creatorcontrib>Liu, W.-R.</creatorcontrib><creatorcontrib>Hsieh, W. F.</creatorcontrib><creatorcontrib>Hsu, C.-H.</creatorcontrib><creatorcontrib>Tsao, Hou-Yen</creatorcontrib><creatorcontrib>Chu, Jian-An</creatorcontrib><creatorcontrib>Chang, Hsing-Cheng</creatorcontrib><title>Effects of ultraviolet treatment on the contact resistivity and electronic transport at the Ti/ZnO interfaces</title><title>Journal of applied physics</title><description>We report on the effect of ultraviolet (UV) treatment on the specific contact resistance
(
ρ
)
and electronic transport at the Ti/ZnO interfaces. The experimental results show the same barrier height of Ti/ZnO samples without UV treatment as Ti/ZnO samples with UV treatment and the higher
ρ
of Ti/ZnO samples with UV treatment than Ti/ZnO samples without UV treatment, suggesting the barrier-height independence of
ρ
. Based on the thermionic-emission model and x-ray photoelectron spectroscopy results, we found that the induced decrease in the number of the hydroxides at the surface region of ZnO by UV treatment resulted in decreases in the electron concentration near the surface region and the excess current component related to tunneling, increasing in
ρ
of Ti/ZnO samples.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEQQIMoWKsH_0GuHrbNbPYrF0FKrUKhl3rxsmSzE4xsk5KMhf57V1u8CQMzh_fm8Bi7BzEDUck5zCSUdS7ggk1ANCqry1JcsokQOWSNqtU1u0npUwiARqoJ2y2tRUOJB8u_Bor64MKAxCmiph164sFz-kBugidtiEdMLpE7ODpy7XuOw6jH4J0ZHe3TPkTimn6drZu_-w13njBabTDdsiurh4R35z1lb8_L7eIlW29Wr4undWbypqDM1AZrpYzIq6Yqi0oJiVp0uTV9MY6WIPvxsnUpCq2gN12FZVf2Ajo0dQdyyh5Of00MKUW07T66nY7HFkT706mF9txpZB9PbDKONLng_4fPsdpg279Y8hs-gXKv</recordid><startdate>20090701</startdate><enddate>20090701</enddate><creator>Lin, Yow-Jon</creator><creator>Tsai, Chia-Lung</creator><creator>Liu, W.-R.</creator><creator>Hsieh, W. F.</creator><creator>Hsu, C.-H.</creator><creator>Tsao, Hou-Yen</creator><creator>Chu, Jian-An</creator><creator>Chang, Hsing-Cheng</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20090701</creationdate><title>Effects of ultraviolet treatment on the contact resistivity and electronic transport at the Ti/ZnO interfaces</title><author>Lin, Yow-Jon ; Tsai, Chia-Lung ; Liu, W.-R. ; Hsieh, W. F. ; Hsu, C.-H. ; Tsao, Hou-Yen ; Chu, Jian-An ; Chang, Hsing-Cheng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c284t-c7ce799c02686546903ea0b2fcd4cd4a313dd4cf7504a91dcb6e5b5d01bec7b13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lin, Yow-Jon</creatorcontrib><creatorcontrib>Tsai, Chia-Lung</creatorcontrib><creatorcontrib>Liu, W.-R.</creatorcontrib><creatorcontrib>Hsieh, W. F.</creatorcontrib><creatorcontrib>Hsu, C.-H.</creatorcontrib><creatorcontrib>Tsao, Hou-Yen</creatorcontrib><creatorcontrib>Chu, Jian-An</creatorcontrib><creatorcontrib>Chang, Hsing-Cheng</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lin, Yow-Jon</au><au>Tsai, Chia-Lung</au><au>Liu, W.-R.</au><au>Hsieh, W. F.</au><au>Hsu, C.-H.</au><au>Tsao, Hou-Yen</au><au>Chu, Jian-An</au><au>Chang, Hsing-Cheng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of ultraviolet treatment on the contact resistivity and electronic transport at the Ti/ZnO interfaces</atitle><jtitle>Journal of applied physics</jtitle><date>2009-07-01</date><risdate>2009</risdate><volume>106</volume><issue>1</issue><spage>013701</spage><epage>013701-5</epage><pages>013701-013701-5</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>We report on the effect of ultraviolet (UV) treatment on the specific contact resistance
(
ρ
)
and electronic transport at the Ti/ZnO interfaces. The experimental results show the same barrier height of Ti/ZnO samples without UV treatment as Ti/ZnO samples with UV treatment and the higher
ρ
of Ti/ZnO samples with UV treatment than Ti/ZnO samples without UV treatment, suggesting the barrier-height independence of
ρ
. Based on the thermionic-emission model and x-ray photoelectron spectroscopy results, we found that the induced decrease in the number of the hydroxides at the surface region of ZnO by UV treatment resulted in decreases in the electron concentration near the surface region and the excess current component related to tunneling, increasing in
ρ
of Ti/ZnO samples.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3157201</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2009-07, Vol.106 (1), p.013701-013701-5 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3157201 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
| title | Effects of ultraviolet treatment on the contact resistivity and electronic transport at the Ti/ZnO interfaces |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T11%3A55%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effects%20of%20ultraviolet%20treatment%20on%20the%20contact%20resistivity%20and%20electronic%20transport%20at%20the%20Ti/ZnO%20interfaces&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Lin,%20Yow-Jon&rft.date=2009-07-01&rft.volume=106&rft.issue=1&rft.spage=013701&rft.epage=013701-5&rft.pages=013701-013701-5&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.3157201&rft_dat=%3Cscitation_cross%3Ejap%3C/scitation_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c284t-c7ce799c02686546903ea0b2fcd4cd4a313dd4cf7504a91dcb6e5b5d01bec7b13%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |