Interfacial defects in resistive switching devices probed by thermal analysis

Resistive switching mechanism is investigated by thermal analysis of metal electrodes in the planar Al / Pr 0.7 Ca 0.3 MnO 3 ( PCMO ) / Ni resistive switching device geometry. Two microthermocouples are used to monitor the electrode temperatures under different electrical bias conditions. Comparison...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2009-07, Vol.106 (1), p.014504-014504-4
Main Authors: Lau, H. K., Leung, C. W., Hu, W. H., Chan, P. K. L.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Resistive switching mechanism is investigated by thermal analysis of metal electrodes in the planar Al / Pr 0.7 Ca 0.3 MnO 3 ( PCMO ) / Ni resistive switching device geometry. Two microthermocouples are used to monitor the electrode temperatures under different electrical bias conditions. Comparison of temperature differences between Al and Ni electrodes at high and low resistance states suggests that local heat source exists under the Al electrode at high resistance state. It agrees well with the recent finding in which AlO x presents at the Al/PCMO interface and it can be the origin of the resistance switching mechanism [ Li , J. Phys. D 42 , 045411 ( 2009 ) ]. Thermal measurements demonstrate excellent capability on characterizing resistance switching devices.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3157207