Modeling the temperature characteristics of InAs/GaAs quantum dot lasers

A systematic investigation of the temperature characteristics of quantum dot lasers emitting at 1.3   μ m is reported. The temperature dependence of carrier lifetime, radiative efficiency, threshold current, differential efficiency, and gain is measured, and compared to the theoretical results based...

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Published in:Journal of applied physics 2009-07, Vol.106 (2), p.023105-023105-8
Main Authors: Rossetti, Marco, Fiore, Andrea, Sęk, Grzegorz, Zinoni, Carl, Li, Lianhe
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Language:English
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description A systematic investigation of the temperature characteristics of quantum dot lasers emitting at 1.3   μ m is reported. The temperature dependence of carrier lifetime, radiative efficiency, threshold current, differential efficiency, and gain is measured, and compared to the theoretical results based on a rate equation model. The model accurately reproduces all experimental laser characteristics above room temperature. The degradation of laser characteristics with increasing temperature is clearly shown to be associated to the thermal escape of holes from the confined energy levels of the dots toward the wetting layer and the nonradiative recombination therein.
doi_str_mv 10.1063/1.3176499
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title Modeling the temperature characteristics of InAs/GaAs quantum dot lasers
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