Photoconductivity of iron doped amorphous carbon films on n-type silicon substrates

The Fe doped a-C films on n-type silicon substrates were deposited by pulse laser deposition. The Fe doped a-C films are p-type semiconductor and they are rich in sp2 (∼75%). I-V characteristics and photoconductivity of the structures were measured in the current in-plane geometry. The photoconducti...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2009-07, Vol.95 (2)
Main Authors: Wan, Caihua, Zhang, Xiaozhong, Zhang, Xin, Gao, Xili, Tan, Xinyu
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The Fe doped a-C films on n-type silicon substrates were deposited by pulse laser deposition. The Fe doped a-C films are p-type semiconductor and they are rich in sp2 (∼75%). I-V characteristics and photoconductivity of the structures were measured in the current in-plane geometry. The photoconductivity with magnitude of 170∼220 was observed under white light illumination with power of 20 mW/cm2 at room temperature. The photoconductivity is ascribed to the p-n junction formed between the p-type a-C: Fe film and the n-type Si substrate whose reverse-biased saturation current increases intensively under illumination.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3177190