Piezoelectric oxide semiconductor field effect transistor touch sensing devices

This work presents piezoelectric oxide semiconductor field effect transistor (POSFET) based touch sensing devices. These devices are fabricated by spin coating thin (∼2.5 μm) piezoelectric polymer film directly on to the gate area of metal oxide semiconductor (MOS) transistor. The polymer film is pr...

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Bibliographic Details
Published in:Applied physics letters 2009-07, Vol.95 (3)
Main Authors: Dahiya, Ravinder S., Metta, Giorgio, Valle, Maurizio, Adami, Andrea, Lorenzelli, Leandro
Format: Article
Language:English
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Summary:This work presents piezoelectric oxide semiconductor field effect transistor (POSFET) based touch sensing devices. These devices are fabricated by spin coating thin (∼2.5 μm) piezoelectric polymer film directly on to the gate area of metal oxide semiconductor (MOS) transistor. The polymer film is processed in situ and challenging issues such as in situ poling of piezoelectric polymer film, without damaging or altering the characteristics of underlying MOS devices, are successfully dealt with. The POSFET device represents an integral “sensotronic” unit comprising of transducer and the transistor—thereby sensing as well as conditioning (and processing) the touch signal at “same site.”
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3184579