On the growth and electrical characterization of CuO nanowires by thermal oxidation

We present a detailed study on the growth process of cupric oxide (CuO) nanowires by thermal oxidation. The morphology of nanowires, obtained at different oxidation temperatures and times, was determined. The diameter of nanowires was found to depend linear on temperature whereas the time dependence...

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Bibliographic Details
Published in:Journal of applied physics 2009-08, Vol.106 (3), p.034303-034303-5
Main Authors: Gonçalves, A. M. B., Campos, L. C., Ferlauto, A. S., Lacerda, R. G.
Format: Article
Language:English
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Summary:We present a detailed study on the growth process of cupric oxide (CuO) nanowires by thermal oxidation. The morphology of nanowires, obtained at different oxidation temperatures and times, was determined. The diameter of nanowires was found to depend linear on temperature whereas the time dependence of their length is modeled by a parabolic law. The results suggest that CuO nanowires are formed as a result of the competition between grain boundary and lattice diffusion of Cu atoms across a Cu 2 O layer. Electrical characterization of the nanowires was also performed. A field effect transistor was produced with an isolated nanowire showing p -type characteristics. The resistivity, mobility, and density of carriers were calculated. Nanowire growth by thermal oxidation is very simple and has great potential to be used for large scale production; this opens possibilities for various kinds of application.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3187833