Quintuple-layer epitaxy of thin films of topological insulator Bi2Se3

Atomically smooth, single crystalline Bi2Se3 thin films were prepared on Si(111) by molecular beam epitaxy. Scanning tunneling microscopy, low-energy electron diffraction, x-ray photoelectron emission spectroscopy, and Raman spectroscopy were used to characterize the stoichiometry and crystallinity...

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Bibliographic Details
Published in:Applied physics letters 2009-08, Vol.95 (5)
Main Authors: Zhang, Guanhua, Qin, Huajun, Teng, Jing, Guo, Jiandong, Guo, Qinlin, Dai, Xi, Fang, Zhong, Wu, Kehui
Format: Article
Language:English
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Summary:Atomically smooth, single crystalline Bi2Se3 thin films were prepared on Si(111) by molecular beam epitaxy. Scanning tunneling microscopy, low-energy electron diffraction, x-ray photoelectron emission spectroscopy, and Raman spectroscopy were used to characterize the stoichiometry and crystallinity of the film. The films grow in a self-organized quintuple layer by quintuple-layer mode, and atomically smooth films can be obtained, with controllable thickness down to one quintuple layer (∼1 nm).
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3200237